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    • 专利摘要:
    The invention relates to a photonic device (1) comprising: a support (120); an intermediate layer (420) having at least one dielectric material and a first and a second silicon excess (412, 414) spaced from each other by a gap (413); a first structured silicon layer (210) at least partially forming a waveguide (200) and a first to a fifth waveguide section (211, 212, 213, 214, 215); a first dielectric layer (110) covering the first silicon layer (210) and a gain structure (310) having at least one gain medium in contact with the first dielectric layer (110); the second and fourth waveguide sections (212, 214), the first and second thicknesses (412, 414) of silicon, and the first and second ends of the gain structure (310) forming a first and a second zone optical transition between a laser hybrid waveguide, formed by a central portion of the gain structure (310), the gap (413) and the third waveguide section (213), and respectively the first and the fifth waveguide section (211, 215). The invention further relates to a method of manufacturing such a photonic device (1).
    公开号:FR3061961A1
    申请号:FR1750441
    申请日:2017-01-19
    公开日:2018-07-20
    发明作者:Sylvie Menezo；Torrey Lane Thiessen；Joyce Kai See Poon
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    @ Holder (s): COMMISSION FOR ATOMIC ENERGY AND ALTERNATIVE ENERGIES Public establishment.
    O Extension request (s):
    Agent (s): BREVALEX Limited liability company.
    ® PHOTONIC DEVICE COMPRISING A LASER OPTICALLY CONNECTED TO A SILICON WAVEGUIDE AND METHOD FOR MANUFACTURING SUCH A PHOTONIC DEVICE.
    FR 3,061,961 - A1
    The invention relates to a photonic device (1) comprising: a support (120); an intermediate layer (420) comprising at least one dielectric material and a first and a second extra thickness of silicon (412, 414) spaced from each other by a space (413); a first structured silicon layer (210) at least partially forming a waveguide (200) and a first to a fifth waveguide section (211, 212, 213, 214, 215); a first dielectric layer (110) covering the first silicon layer (210) and a gain structure (310) having at least one gain medium in contact with the first dielectric layer (110); the second and fourth waveguide sections (212, 214), the first and second extra thicknesses (412, 414) of silicon, and the first and second ends of the gain structure (310) forming first and second zones of optical transition between a hybrid laser waveguide, formed by a central portion of the gain structure (310), the space (413) and the third waveguide section (213), and respectively the first and the fifth waveguide section (211,215). The invention further relates to a method of manufacturing such a photonic device (1).

    PHOTONIC DEVICE COMPRISING A LASER OPTICALLY CONNECTED TO A SILICON WAVEGUIDE AND METHOD FOR MANUFACTURING SUCH A PHOTONIC DEVICE
    DESCRIPTION
    TECHNICAL AREA
    The invention relates to the field of optoelectronics and photonics devices.
    A more specific subject of the invention is a photonic device comprising a silicon waveguide intended to accommodate several silicon photonic components and a hybrid laser on silicon comprising a gain medium capable of emitting light
    PRIOR STATE OF THE ART
    The manufacture of hybrid photonic devices integrating silicon photonic components and at least one hybrid laser on silicon comprising a gain medium capable of emitting light, such as a gain medium made of III-V semiconductor materials, must necessarily take into account the design constraints with regard to the dimensioning of the first silicon waveguide accommodating the silicon photonic components and of the second silicon waveguide used in the composition of the hybrid laser. Such a hybrid laser generally comprises:
    a gain structure comprising at least one gain medium capable of emitting light, the gain structure being overlying a section of the second silicon waveguide to form therewith a hybrid waveguide, a optical feedback structure making it possible to form an oscillating cavity comprising the gain medium of said gain structure, and optical transitions between the second silicon waveguide and the hybrid waveguide.
    The term “gain structure” is understood above and in the rest of this document to be a structure made of semiconductor materials suitable for providing light emission which can in particular be stimulated in order to provide laser type emission when such a structure is coupled to an optical feedback structure, such as a Bragg grating distributed along said gain structure. Such a gain structure comprises at least one gain medium, which is the material in which the light emission is generated, and, on both sides, a first and second zone each having a type of conductivity opposite to that on the other to authorize an electric pumping of the gain medium. In a conventional application of lasers with semiconductor materials, in particular for providing an emission in the wavelength ranges of infrared and in particular at wavelengths 1310nm and 1550nm, the first and second zones and the medium to gain are formed by epitaxial growth on indium phosphide InP or gallium arsenide GaAs substrates. Indeed, the small mesh difference of these materials with their quaternary alloys makes it possible to provide first and second zones and a gain medium of good crystalline quality ideal for optimizing the laser emission efficiency.
    The gain medium of such a gain structure may comprise a succession of quantum wells providing the emission of light. In order to increase the optical mode confinement factor in quantum wells, these are generally surrounded by two barrier layers. As an alternative to quantum wells, the gain medium can also include quantum dots. In order to form such quantum wells, or quantum dots, and in a conventional configuration of such a hybrid laser, the gain medium can comprise at least two semiconductor materials selected for example from the group comprising indium phosphide InP , gallium arsenide GaAs, indium arsenide InAs, galliumindium phosphide arsenide InGaAsP, gallium-indium-aluminum arsenide InGaAlAs, aluminum-gallium arsenide AIGaAs and arsenide- indium phosphide InAsP and their alloys. In the same way, the first and second zones can be produced in at least one semiconductor material selected from the group comprising indium phosphide InP, gallium arsenide GaAs, indium arsenide InAs, l indium gallium arsenide-phosphide InGaAsP, indium-aluminum gallium arsenide InGaAlAs, indium-aluminum nitride arsenide InGaAsN, aluminum-gallium arsenide AIGaAs and indium arsenide phosphide InAsP and their alloys, one of the first and second zones being of a first type of conductivity in which the majority carriers are the electrons, the other being of a second type of conductivity in which the majority carriers are the holes.
    Such gain structures can be either of the "vertical" type or of the "lateral" type. In the first case, that is to say a gain structure of the "vertical" type, the first zone, the gain medium and the second zone consist of a stack of layers on the surface of a support. In such a configuration, the thickness of the stack forming the gain structure is generally between 1 to 3 μm. In the second case, that is to say a gain structure of the "lateral" type, the first zone, the gain medium, and the second zone succeed one another in contact along a support. The typical thickness of a gain structure of the lateral type is of the order of 500 nm.
    The term “optical feedback structure” is understood above and in the rest of this document to be an optical structure produced in a waveguide and making it possible to form an oscillating guiding cavity comprising the gain medium. Thus, the optical field goes back and forth in the waveguide of the cavity between the ends of this same oscillating cavity, this to generate a stimulated emission from the gain medium.
    In the case of a laser called distributed feedback laser (known as the DFB laser acronym), the optical feedback structure is constituted by a distributed reflector, such as a Bragg grating. , under or in the gain structure, forming a selective wavelength mirror.
    In the case of a distributed Bragg network laserdit (or Distributed Bragg Reflector Laser in English - known by the acronym DBR laser), the feedback structure consists of reflectors arranged in the waveguide, on both sides. others from the gain structure.
    Thus, in such a photonic device, the first silicon waveguide accommodates the silicon photonic components, such as passive components (for example and in a nonlimiting manner of surface coupling networks, optical multiplexer / demultiplexer of network type waveguides (known by the acronym AWG) or as a lattice, resonant rings) and such as active components (for example, and in a limiting manner, modulators formed by P and N dopings of the guide Silicon wave). These components, which are accommodated in the first waveguide, require a relatively reduced waveguide thickness, generally of the order of 220 nm to 300 nm. This is particularly the case for modulators, so that they have an optimized bandwidth, and for resonant rings, so that they have a sparse resonance wavelength.
    On the other hand, the integration of the hybrid laser requires the use of a second silicon waveguide of greater thickness, generally greater than or equal to 500 nm. More complete information concerning these constraints of integration of a hybrid laser in such a photonic device is notably provided by Po Dong et al. in their work published in the scientific journal "Optics Express" Vol. 22 n ° 22 in November 2014 pages 26861 to 26868. In addition, the first and second waveguides being of different thickness, such a device necessarily includes transitions between the first silicon waveguide and the second guide silicon wave.
    In order to meet these design constraints, various manufacturing processes and photonic devices have been proposed.
    A first manufacturing process described by Duprez H. and his co-authors in the scientific review "IEEE Photonics Technology Letters" Vol.28 N ° 18 pages 1920 1923 in September 2016, comprises the following stages:
    providing a substrate associated with a silicon layer on a first dielectric layer, the silicon layer having a thickness of 500 nm, a step of partial thinning of the silicon layer to form a first and a second zone in which the silicon thicknesses are 300 nm and 500 nm respectively, and several stages of structuring of the silicon to form in the first zone a first silicon waveguide of 300 nm thickness, said waveguide accommodating a surface coupling network ( indicated “grating to fi ber coupler” by the coauthors), and in the second zone of thickness 500 nm, the silicon parts composing the hybrid laser on silicon, and more particularly, the second silicon waveguide, the structure of optical feedback (distributed Bragg grating accommodated in a section of the second waveguide intended to be underlying the gain structure), as well as the zones of optical transition of the laser hybrid waveguide, encapsulation of the partially thinned silicon layer structured by a dielectric material and planarization to form a second planar dielectric layer, formation of a gain structure at the second silicon waveguide in contact with the second dielectric layer, such a formation making it possible to form the laser hybrid waveguide comprising in particular a part of the gain structure and the optical counteraction structure.
    Such a method therefore makes it possible to provide a hybrid photonic device comprising a first waveguide having a thickness of 300 nm and therefore capable of accommodating optimized silicon components while comprising, by means of the second zone of thickness of 500 nm, a hybrid laser also optimized. However, such a manufacturing method and the photonic device which it makes it possible to manufacture have a certain number of drawbacks.
    Indeed, such a manufacturing process uses an etching step to locally thin the first layer of silicon in order to form the first waveguide with a thickness of 300 nm. It results from such thinning that the first waveguide has a large roughness, which results in relatively large optical losses. Furthermore, the thickness of the first waveguide has a significant dispersion which can degrade the functioning of the components which are accommodated therein (in particular an increased dispersion of the central wavelength of filters of the resonant ring type or of AWG multiplexers / demultiplixers, or to scale networks). In addition, due to the need to encapsulate the first and second zones in a dielectric material, the second zone having a thickness greater than 200 nm than that of the first zone, and the need to planarize this same dielectric material to form the second dielectric layer, the thickness of the second dielectric layer is poorly controlled and has a dispersion greater than or equal to ± 20 nm. As a result, the gain structure and the second zone, which in particular accommodates the optical feedback structure, are separated from each other by a dielectric thickness greater than or equal to 50 nm ± 20 nm or even 75 nm . This results in poor control of the confinement of the optical mode in the gain medium and of the reflecting power of the optical feedback structure.
    In addition, the section of the second silicon waveguide underlying the gain structure, and which in particular accommodates the optical feedback structure, has a thickness of 500 nm. As a result, the optical mode in the hybrid laser waveguide is pulled towards the silicon layer and therefore, therefore, that the confinement of the optical mode in the gain medium is less. The efficiency of the laser emission is therefore not optimized.
    A second method is described by Po Dong et al. in their work published in the scientific journal "Optics Express" Vol. 22 n ° 22 in November 2014 pages 26861 to 26868 and by Ferrotti T. et al. in the scientific journal "IEEE Photonics Technology Letters" Vol.28 N ° 18 pages 1944 to 1947.
    This process includes the following steps:
    supply of a substrate associated with a first layer of 300 nm silicon on a first dielectric layer, the first layer of silicon thus having the thickness of the first waveguide, structuring of the first layer of silicon to form the first guide wave and a waveguide section separate from the first waveguide, the first waveguide accommodating a surface coupling network, formation of an extra thickness of silicon accommodating the structure of optical feedback by deposition of a second layer of silicon covering at least partially the first layer of structured silicon, the cumulative thickness of the extra thickness of silicon and the first layer of silicon being equal to 500 nm in order to allow the formation of the second optical waveguide, one of which section is intended to be under the gain structure and to form the hybrid waveguide and the transition zones with the latter, encapsulation of the first layer of structured silicon and the additional thickness, associated with the optical feedback structure which it accommodates, with a dielectric material and formation of a second dielectric layer, formation of a gain structure, comprising at least one medium gain in III-V semiconductor, the gain structure being in contact with the second dielectric layer.
    Note that the work of Po Dong et al. and Ferrotti T. et al. are distinguished in that they respectively use monocrystalline silicon deposited in contact with the first layer of silicon and a layer of amorphous silicon deposited in contact with an oxide layer.
    However, with such a method, the quality of the silicon forming the excess thickness, whether with the monocrystalline silicon selectively epitaxially grown on the first layer of silicon or with the amorphous silicon, is relatively poor, in particular with respect to that provided. by a layer of silicon on insulator. Thus, the losses of waveguides produced in such a silicon (epitaxial or deposited) are therefore relatively large, in comparison with that of a waveguide formed in a layer of silicon on insulator. Thus, with such a method, the laser hybrid waveguide is produced in a relatively low quality silicon and the optical losses in the hybrid waveguide are increased with respect to a photonic device according to the first method. described above. In the same way as for the first manufacturing process, the thickness of the second dielectric layer, which separates the waveguide, and in particular the optical feedback structure which is accommodated there, from the gain structure, is poorly controlled and has a dispersion greater than or equal to ± 20 nm. As a result, the gain structure and the second zone, associated with the optical feedback structure, are separated from each other by a dielectric thickness greater than or equal to 50 nm ± 20 nm, or even 75 nm ± 50 nm. This leads to poor control of the confinement of the optical mode in the gain medium and of the reflecting power of the optical feedback structure.
    In addition and in an identical manner to the first method described above, the section of the second silicon waveguide underlying the gain structure, and which in particular accommodates the optical feedback structure, has a thickness of 500 nm. . As a result, the optical mode in the laser hybrid waveguide is pulled towards the silicon layer and therefore, therefore, the confinement of the optical mode in the gain medium is less. The efficiency of the laser emission is therefore not optimized.
    A third method, described in particular in document EP2988378, comprises the following steps:
    supply of a substrate associated with a layer of silicon (indicated SOI) on a first dielectric layer (indicated BOX), the layer of silicon (SOI) having a thickness of 500 nm, structuring of the layer of silicon to form the first and second silicon waveguide over part of the thickness of the silicon layer, the rest of the thickness being retained, the structuring of the silicon layer being adapted to form, in the second waveguide , the optical transition zones and the waveguide section intended to be underlying the gain structure, encapsulation of the silicon layer structured by a dielectric material and planarization to form a second dielectric layer, transfer of the substrate / silicon layer / second dielectric layer assembly on a support and removal of the substrate and the first dielectric layer (BOX), localized thinning in a first region of the silicon layer in order to thin the first waveguide to a thickness of 300 nm, the second waveguide retaining a thickness of 500 nm structuring of the second waveguide to form the optical feedback structure accommodated in the waveguide section intended to be underlying the gain structure, encapsulation of the silicon layer in a third dielectric layer, formation of a gain structure in contact with the third dielectric layer, the gain structure forming, with the section of the second silicon waveguide which is underlying it, the hybrid laser waveguide, the laser thus being formed by the gain structure, the feedback structure and the optical transition zones and the photonic device being formed by the laser and the first silicon waveguide.
    Such a method uses several stages of etching and encapsulation of the silicon layer which are detrimental for the precision of the thickness of the first waveguide, this by generating losses therein, and therefore for the optical performance of the silicon components accommodated in the first waveguide. In the same way, like the first and second methods described above, with such a manufacturing method the thickness of the dielectric layer which separates the waveguide from the gain structure is poorly controlled, the dielectric layer thus having greater dispersion ± 20 nm. As a result, the gain structure and the second zone, which in particular accommodates the optical feedback structure, are separated from each other by a dielectric thickness greater than or equal to 50 nm ± 20 nm, or even 75 nm ± 50 nm. This results in poor control of the confinement of the optical mode in the gain medium and of the reflecting power of the optical feedback structure.
    In addition and in an identical manner to the first and to the second method described above, the section of the second silicon waveguide underlying the gain structure, and which in particular accommodates the optical feedback structure, has a thickness 500 nm. As a result, the optical mode in the laser hybrid waveguide is pulled towards the silicon layer and therefore, therefore, the confinement of the optical mode in the gain medium is less. The efficiency of the laser emission is therefore not optimized.
    STATEMENT OF THE INVENTION
    The invention aims to remedy at least one of these drawbacks and thus aims to provide a photonic device comprising a laser having an optical confinement in the medium with optimized gain and reduced losses vis-à-vis the lasers of the devices. prior art optics.
    To this end, the invention relates to a photonic device comprising: a support, an intermediate layer in contact with the support and comprising at least one dielectric material and a first and a second silicon extra thickness, the first and the second silicon extra thickness being separated one from the other by a space, a first layer of silicon in contact with the intermediate layer opposite the support, the first layer of silicon comprising at least part of the thickness of a waveguide , and a first to a fifth waveguide section separate from the waveguide, the first to the fifth waveguide section succeeding each other and being optically connected to the waveguide by at least one of the first and fifth waveguide section, the second, fourth and third waveguide section being opposite the first and second allowance and space respectively, a e first dielectric layer covering the first layer of silicon opposite to the intermediate layer, a gain structure comprising at least one gain medium capable of emitting light, the gain structure having a central portion facing the space and a first and a second end opposite the first and the second allowance, thus, the central portion of the gain structure forms with the space and the third waveguide section a hybrid waveguide laser, the second and fourth waveguide sections, the first and second silicon thicknesses, and the first and second ends of the gain structure forming a first and a second optical transition zone of an optical mode between the guide hybrid laser wave and respectively the first and fifth waveguide sections,
    - a feedback structure to form an oscillating cavity comprising at least part of the gain medium so as to form a laser optically connected to the waveguide by at least one of the first and the fifth guide section wave.
    With such a photonic device, the optical transition between the first and fifth waveguide sections and the laser hybrid waveguide is obtained without requiring an allowance over the entire length of the gain structure. As a result, the optical connection between the laser and the waveguide is not made to the detriment of a significant drop in optical confinement in the gain medium. Indeed, the silicon layer under the gain structure, outside the transition zones, has a relatively small thickness, corresponding to that of the silicon waveguide. The laser emission efficiency is therefore improved vis-à-vis the photonic devices of the prior art which does not have such an optimized confinement.
    In addition, the optical transition zones present at the two ends of the gain structure make it possible to provide an optical transition from the laser emission to the waveguide in a manner substantially identical to that of the prior art. Thus, the first and second optical transition zones provide an adiabatic optical mode transition between the laser hybrid waveguide and the first and fifth waveguide sections, respectively. The photonic device thus thus presents an optimized optical confinement without this significantly affecting the transition from laser emission to the silicon waveguide of reduced thickness.
    The third waveguide section can accommodate a distributed reflector forming the feedback structure.
    The distributed reflector can be a distributed Bragg grating selected from the group comprising the distributed Bragg gratings with lateral corrugations partially etched in a thickness of the first silicon layer, the distributed Bragg gratings with lateral corrugations totally etched in the thickness of the first layer of silicon, the Bragg gratings distributed with vertical corrugations partially etched in the thickness of the first layer of silicon and the Bragg gratings distributed with vertical corrugations totally etched in the thickness of the first layer of silicon.
    With such distributed Bragg gratings accommodated in the third waveguide section, the laser is a laser of the distributed feedback laser type also known under the English name “Distributed FeedBack laser” and the corresponding acronym DFB laser. It particularly benefits from the improved confinement of the gain medium provided by the invention.
    In order to provide a longitudinal single mode operation of the laser, the device can include one of the following two characteristics:
    - the distributed Bragg grating includes a phase jump of the quarter wave type.
    - one of the first and the fifth waveguide section accommodates a substantially total reflector, the total reflector being able to be selected from the Sagnac type reflectors, the distributed Bragg gratings, the facet type mirrors with high reflectivity treatment , the first waveguide being connected only to the other of the first and the fifth waveguide sections.
    In this way, the laser has perfectly longitudinal single mode emission.
    The first dielectric layer may have a thickness less than or equal to 75 nm.
    The distributed reflector can be selected from the group comprising the distributed Bragg gratings with lateral corrugations partially etched in a thickness of the first layer of silicon and the distributed Bragg gratings with vertical corrugations partially etched in the thickness of the first layer of silicon , and the part of the thickness of the first layer of silicon in which the corrugations are etched being the part of the thickness of the first layer of silicon which is opposite to the first dielectric layer and to the gain structure.
    The first dielectric layer may have a thickness less than or equal to 50 nm, or even less than or equal to 30 nm.
    The first and fifth waveguide sections can accommodate first and second mirrors, respectively, to form an oscillating cavity including the gain medium, the first and second mirrors forming a feedback structure.
    Each of the first and second mirrors can be selected from the group comprising Sagnac type mirrors, faceted type mirrors, distributed Bragg gratings.
    The second and fourth waveguide sections can respectively accommodate a first and second distributed Bragg grating so as to form an oscillating cavity comprising the gain medium, the first and second distributed Bragg grating forming a feedback structure.
    The first and second extra thickness respectively accommodate a first and second distributed Bragg grating so as to form an oscillating cavity comprising the gain medium, the first and second distributed Bragg grating forming the feedback structure.
    In this way, the first and second Bragg mirrors or gratings delimit an oscillating cavity comprising the gain medium of the gain structure this with an optimized confinement, the optical mode not being drawn towards the third waveguide section. which has a relatively small thickness.
    The gain structure is chosen from the group comprising gain structures of the “vertical junction” type and gain structures of the “lateral junction” type.
    These two types of gain structure both benefit from the advantage of the invention. It will be noted that this is particularly the case for a gain structure with “lateral junction”, known for its thin thickness generally less than 500 nm, since it is possible to use to form the third waveguide section a first thin silicon layer, and therefore, to maximize the amount of energy of the optical mode confined in the gain medium, without the optical transition suffering.
    The layout of the waveguide can be chosen from:
    an arrangement of the waveguide entirely in the first layer of silicon,
    an arrangement of a first part of the thickness of the waveguide in the first layer of silicon and of a second part of the thickness of the waveguide in a third excess thickness of silicon,
    an arrangement of a first part of the thickness of the waveguide in the first layer of silicon and of a second part of the thickness of the waveguide in a fifth excess thickness made of a material of the structure to gain, a combination of at least two of the above arrangements.
    The first waveguide can accommodate at least one optical component, the optical component preferably being chosen from the group comprising optical modulators silicon with PN junction, hybrid semiconductor modulators III-V on silicon, surface coupling networks, wafer couplers, optical filters, wavelength multiplexers and demultiplexers, and photodetectors including the germanium silicon photodetector and lll-V semiconductor photodetectors on silicon.
    The first dielectric layer may have a thickness less than or equal to 30 nm.
    The first silicon layer may have a thickness less than or equal to 300 nm, the latter preferably being equal to 300 nm.
    The first dielectric layer and the first silicon layer may be respectively an insulating layer and a silicon layer of a substrate of the silicon on insulator type.
    The first and second extra thickness of silicon are each made of a silicon selected from a monocrystalline silicon, an amorphous silicon, and a polycrystalline silicon.
    The at least a third additional thickness may be made of the same material as the first and the second additional thickness.
    At least one of the second waveguide section and the first allowance and one of the fourth waveguide section and the second allowance may have the first and second ends of the structure at respectively gain a tapered shape and / or at least one tapered extremity.
    At least one of the first and second ends of the gain structure may have a tapered and / or trapezoidal shape.
    A first and a second electrical contact may be provided in contact with the gain structure in order to polarize the gain structure.
    The invention further relates to a method of manufacturing a photonic device comprising at least one silicon waveguide and a laser comprising a gain medium capable of emitting light, the method comprising the following steps:
    providing a substrate associated with a first layer of silicon on a first dielectric layer, structuring the first layer of silicon to form in the first layer of silicon at least a thickness part of a waveguide and first with fifth waveguide sections distinct from the waveguide, the first to the fifth waveguide section succeeding each other and being optically connected to the waveguide by at least one of the first and the fifth section waveguide, forming a first and a second extra thickness of silicon separated from each other by a space, the first and the second extra thickness and the space being opposite the second, fourth respectively and third sections of waveguide or zones of the first layer of silicon intended for the formed ones, burial of at least the first and of the second extra thickness of silicon by at least one dielectric material that and planarization of said dielectric material in order to form an intermediate layer, a substrate / first dielectric layer / first silicon layer / intermediate layer being thus formed, supply of a support, assembly of the substrate / first dielectric layer / first layer silicon layer / intermediate layer on the support, the assembly being carried out by bonding of the intermediate layer on the support, removal of the substrate, formation of a gain structure comprising at least the gain medium, the gain structure being formed in contact with the first dielectric layer by presenting a central portion of the gain structure facing the space and a first and a second end facing the first and the second allowance, thus, the central portion of the gain structure forms with space and the third waveguide section a hybrid laser waveguide, the second and fourth i th waveguide section, the first and second extra thicknesses of silicon, and the first and second ends of the active zone forming a first and a second optical transition zone of an optical mode between the laser hybrid waveguide and respectively the first and the fifth waveguide section, the photonic device thus being formed, and in which there is further formed a feedback structure to form an oscillating cavity comprising at least in part the gain medium and thus forming a laser optically connected to the waveguide by at least one of the first and fifth waveguide sections during at least one of the steps from the step of structuring the first layer of silicon and the step of forming the first and second extra thickness of silicon.
    Such a method allows the manufacture of a device benefiting from the advantages of the invention.
    It will also be noted that with such a method it is possible to provide a photonic device having a thickness of the first dielectric layer equal to or less than 30 nm with a control of ± 2 nm on this thickness, not accessible with the methods of prior art.
    It will also be noted that the first layer of silicon is a layer of silicon on a dielectric layer, such as that provided by a silicon on insulator substrate, which therefore has optimal crystal quality. Thus the third waveguide section underlying the gain structure, and therefore with which the gain structure interacts, has an optimal crystal quality. Optical losses at the level of the laser hybrid waveguide are therefore reduced.
    Similarly, if the advantages indicated above relate to the individual manufacture of a single photonic device according to the invention, these advantages also apply during a manufacturing process according to the invention in which several photonic devices are produced collectively by a parallel implementation of the manufacturing steps. It will be noted in particular that the thickness of the first dielectric layer is homogeneous in all of the photonic devices formed making it possible to provide relatively homogeneous performance / characteristics unlike the photonic devices formed with a process of the prior art.
    The manufacturing method can be a method of manufacturing a plurality of photonic devices, the steps of the method being implemented to form said devices in parallel.
    The feedback structure can be formed during the structuring step of the first silicon layer, the structuring of the first silicon layer further comprising the formation of a distributed reflector forming the accommodated feedback structure in the third waveguide section.
    With such a reflector accommodated in the third waveguide section, the method makes it possible to manufacture a photonic device comprising a laser of the distributed feedback laser type also known under the English name “Distributed FeedBack laser” and the corresponding acronym laser DFB. Such a photonic device manufactured by such a manufacturing process particularly benefits:
    - as regards the laser, the improved confinement in the gain medium provided by the invention, the good crystalline quality of the first silicon layer, and the low optical losses which result therefrom, and the controlled thickness of the first dielectric layer,
    - as regards the waveguide and the optical components which are accommodated therein, the use of a first layer of silicon having good crystalline quality and therefore low optical losses, and of controlled thickness, and a first dielectric layer of controlled thickness.
    the feedback structure can be formed during the step of structuring the first silicon layer, the structuring of the first silicon layer further comprising the formation of a first mirror accommodated in one of the first and the second waveguide and a second mirror section accommodated in one of the fourth and fifth waveguides, the first and a second mirror thereby forming an oscillating cavity comprising the gain medium.
    The feedback structure can be formed in the step of forming the first and second silicon stock, the formation of the first and second silicon stock further comprising forming a first and a second Bragg grating accommodated in the first and second silicon extra thickness, respectively, the first and a second mirror thus forming an oscillating cavity comprising the gain medium.
    The step of structuring the first silicon layer may be prior to the step of forming the first and second extra thicknesses of silicon.
    During the step of structuring the first layer of silicon is subsequent to the step of removing the substrate and in which the step of structuring the first layer of silicon is a step of structuring the first layer of silicon and the first layer of dielectric.
    There may also be provided a step of thinning the first dielectric layer between the steps of removing the substrate and forming the gain structure.
    Thus the first dielectric layer has a perfectly controlled thickness, since it comes from the thinning of a perfectly flat layer.
    The step of forming the first and the second extra thickness of silicon can be selected from the following group of training steps:
    - selective deposition of silicon in contact with the first silicon layer to form the first and second extra thickness of silicon,
    deposition of a second layer of silicon and localized etching of the second layer of silicon to form the first and second extra thickness of silicon,
    - Assembling a second layer of silicon on the first layer of silicon and localized etching of the second layer of silicon to form the first and second extra thickness of silicon.
    With such stages of formation of the first and second allowance, it is possible to provide allowance in silicon of good optical quality.
    The manufacturing process can also comprise the following step: forming at least a third silicon extra thickness covering parts of the first layer of silicon structured or intended to be structured, the third waveguide section remaining free of additional silicon allowance, and the at least one third silicon allowance may be part of the waveguide.
    In this way, it is possible to independently control each other the thickness of the third waveguide section and the waveguide. This is particularly advantageous for a device comprising a gain structure with "lateral junction".
    During the step of forming the gain structure, a semiconductor zone can also be formed in at least one semiconductor material forming the gain structure opposite with a portion of the first waveguide in order to form a hybrid modulator accommodated in said first waveguide.
    BRIEF DESCRIPTION OF THE DRAWINGS
    The present invention will be better understood on reading the description of exemplary embodiments, given for purely indicative and in no way limiting, with reference to the appended drawings in which:
    Figures IA to 1H respectively illustrate a simplified top view, a view in longitudinal section along the axis EE both schematic of a photonic device according to a first embodiment of the invention in which a Bragg grating is provided distributed under a gain medium, the Bragg grating being of the “lateral corrugation” type partially etched in a first layer of silicon as an optical feedback structure, four schematic views in section along the axes AA, BB, CC and DD of this same photonic device and two close-up views, one from above and one in section along the axis FF, of a gain structure of the “vertical junction” type equipping said photonic device, FIGS. 2A to 2G illustrate, at by means of schematic top views in section along the axis EE as illustrated in FIG. IA, the main steps of a process for manufacturing the photonic device illustrated in FIG e 1, FIGS. 3A and 3B respectively illustrate the detailed shape of the allowance and of the waveguide section of the optical device illustrated in FIGS. 1A to 1H and an example of another conceivable form of an allowance and d a guide section making it possible to form an optical transition zone as a variant to the form of the first embodiment, FIG. 4A to 4F respectively illustrate a top view, a sectional view along the axis KK, both schematic of a photonic device according to a second embodiment of the invention in which a Bragg grating distributed under the gain structure is provided, the Bragg grating being of the type with "vertical corrugations" partially etched in the first layer of silicon as that feedback structure and four schematic sectional views along the axes GG, HH, Il and JJ of this same photonic device, FIGS. 5A to 5H illustrate the main steps of e manufacture of a photonic device according to a third embodiment of the invention in which there is provided a Bragg grating of the type with “vertical corrugations” partially etched in the first layer of silicon as a feedback structure and of which the corrugations are opposite the gain structure, FIG. 6 illustrates a schematic sectional view of a photonic device in operation according to a fourth embodiment of the invention in which a Bragg grating of the grating type is provided with "vertical corrugations" partially etched as a feedback structure, the photonic device comprising a capacitive hybrid modulator and a surface coupling network partially etched in the first silicon layer, FIGS. 7A and 7B illustrate a close-up view in section the axes LL and MM of an example of making electrical contacts for the structure at g respectively ain and the capacitive modulator of the photonic device illustrated in FIG. 6, FIGS. 8A and 8B illustrate a view in close section along the axes LL and MIVI of another example of making electrical contacts for the gain structure and the modulator respectively. capacitive for the photonic device illustrated in FIG. 6, FIG. 9 illustrates a schematic view from above and in longitudinal section along the axis NN of a photonic device according to a fifth embodiment in which a first and a second are provided Bragg grating in first and fifth waveguide sections this to form an optical feedback structure, the first and second Bragg grating being provided by vertical corrugations partially etched in the first silicon layer, the figures 10A and 10B each illustrate a top view and a view in longitudinal section along the respective axis 00 and schematic and approximate PP fields of a transition zone for FIG. 10A of a photonic device according to a sixth embodiment in which there is provided a first and a second Bragg grating accommodated in respectively a second and a fourth waveguide section, and, for FIG. 10B of a photonic device according to a seventh embodiment in which there is provided a first and a second Bragg grating accommodated in respectively a first and a second allowance, FIGS. 11A to 11C respectively illustrate a schematic view from above, a view in longitudinal section along the axis QQ and a view in side section along the axis RR of a photonic device according to an eighth embodiment of the invention in which the gain structure is a gain structure of the “lateral junction” type and in which the silicon waveguide is formed both in the first layer of silicon and in a third extra thickness.
    Identical, similar or equivalent parts of the different figures have the same reference numerals so as to facilitate the passage from one figure to another.
    The different parts shown in the figures are not shown on a uniform scale, to make the figures more readable.
    The different possibilities (variants and embodiments) must be understood as not being mutually exclusive and can be combined with one another.
    DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS
    Figures IA and IB respectively represent a top view and a sectional view along the schematic EE axis of a photonic device 1 according to a first embodiment of the invention comprising a silicon waveguide 200 and a laser 300 comprising a gain medium 321 capable of emitting light, the laser 300 being optically connected to the waveguide 200.
    The photonic device 1 more specifically comprises:
    a support 120 comprising a second dielectric layer 130 covering the support 120, an intermediate layer 420 in contact with the support 120 by the second dielectric layer 130, the intermediate layer 420 comprising at least one dielectric material and a first and a second extra thickness of silicon 412, 414, the first and second extra thickness of silicon 412, 414 being spaced from one another by a space 413 filled with said dielectric material, a first layer of silicon 210 in contact with the intermediate layer opposite of the support 120, the first layer of silicon 210 comprising at least part of a waveguide 200, and a first to a fifth section of waveguide 211, 212, 213, 214, 215 distinct from the guide wave 200, the first to the fifth section 211, 212, 213, 214, 215 of successive waveguides and being connected to the waveguide 200 by at least one of the first and of the fifth waveguide section 211, 215, the second, fourth and third waveguide section 212, 214, 213 being opposite the first and the second allowance 412, 414 and the space 413 respectively, a first layer of dielectric material 110 covering the silicon layer 210 on a face of the first silicon layer 210 opposite the intermediate layer 420,
    a gain structure 310 comprising at least one gain medium 321 capable of emitting light, the gain structure 310 having a central portion facing the space 413 and a first and a second end facing the first and the second extra thickness 412, 414, thus, the central portion of the gain structure 310 forms with the space 413 and the third waveguide section 213 a hybrid laser waveguide 313, the second and fourth guide sections wave 212, 214 and the first and second thicknesses 412, 414 of silicon forming a first and a second optical transition zone 312, 314 of an optical mode between the laser hybrid waveguide 313 and respectively the first and the fifth waveguide section 211, 215,
    - a feedback structure 220 to form an oscillating cavity comprising the gain medium 321 so as to form the laser 300 optically connected to the waveguide 200 by the first waveguide section 211, the feedback structure 220 being provided in this first embodiment of the invention by a distributed Bragg grating 223 accommodated in the third waveguide section 213,
    a first and a second electrical contact 531, 532 for electrically contacting the gain structure 310,
    an encapsulation layer 510 encapsulating the gain structure and the first and second electrical contact 531, 532.
    It will be noted that, for simplicity and as indicated below, that FIGS. 1A and 1B do not illustrate a quarter-wave defect in the distributed Bragg grating 223, or a total reflector on one side of the laser; one or the other being known to those skilled in the art for ensuring the emission of the DBF type laser according to a single mode of the cavity. Note also that to facilitate reading, Figure IA has been schematized to include only certain components of the photonic device. Thus, for example, the electrical contact 531, the encapsulation layer 510, the dielectric material of the encapsulation layer 420 and the support 120 have not been shown in FIG. IA. For this same purpose, such a diagram is also used for all of the top views of this document and in particular for FIGS. IG, 2B, 2C, 2G, 3A, 3B, 4A, 9, 10A, 10B and 11A.
    The support 120 is a support compatible with the constraints of microelectronics and optoelectronics and can be a support made of semiconductor material or dielectric material. In a particular application of the invention, the support can be a crystalline silicon support. According to this possibility and according to a variant not illustrated in FIGS. 1A and 1B, the support can also integrate electronic control and / or complementary reading components with optical components, such as the laser 300 and the components integrated in the waveguide 200 , and electrical interconnections connecting said electrical components to said optical components. In the same way and according to a variant to this first embodiment, as described below in connection with FIGS. 7A and 7B, the substrate may also include via through electrical conductors participating in the formation of electrical contacts 5631, 532, 533, 534 allowing an electrical connection of these same optical components to a second substrate, the second so-called control substrate, integrating said electronic control and / or reading components complementary to the optical components.
    As illustrated in FIG. 1B, the support 120 comprises a second dielectric layer 130.
    The second dielectric layer 130 is preferably adapted to allow assembly by direct bonding of the intermediate layer 420 on the support 120. Thus, the second dielectric layer 130 has for this purpose a second planar bonding surface. In the particular application of the invention, the second dielectric layer 130 is made of silicon dioxide S1O2.
    The intermediate layer 420 has a first face, preferably forming a first planar bonding surface, by which it is in contact with the second dielectric layer 130, and a second face opposite the first face. The intermediate layer 420 also comprises:
    the first and second extra thickness 412, 414 of silicon spaced from one another by a space 413, one or more dielectric materials enclosing the first and second extra thickness 412, 414 and filling the space 413, said dielectric material forming preferably the first surface of the intermediate layer 420.
    The dielectric material of the dielectric layer is preferably silicon dioxide S1O2. According to one possibility of the invention, not illustrated in Figures IA to IB, the intermediate layer may comprise several dielectric materials in the form of several sublayers.
    The first and second overthickness 412, 414 are produced from a silicon selected from a monocrystalline silicon, an amorphous silicon or a polycrystalline silicon. The thickness of the first and second additional thickness 412,414 is chosen to allow, with the second and fourth waveguide sections 212, 214 respectively, and the first and second ends of the gain structure 310, an adiabatic transition between the hybrid laser waveguide 313 and respectively the first and fifth waveguide sections 211, 215. Thus in a particular application of the invention in which the first silicon layer 210 has a thickness of 300 nm, the first and the second extra thickness 412, 414 have a thickness of 200 nm.
    Of course, if in a usual configuration of the invention, each of the first and the second additional thickness 412, 414 has a constant thickness, it is also conceivable that each of the first and the second additional thickness 412, 414 has a variable thickness, the maximum thickness then being adapted to allow, with the second and fourth waveguide sections 212, 214 and the first and second ends of the gain structure 310 respectively, an adiabatic transition between the hybrid laser waveguide 313 and respectively the first and fifth waveguide sections 211, 215.
    The first and second extra thickness 412, 414 and the space 413 separating them are arranged in the intermediate layer 420 opposite the second, the fourth and the third waveguide section 212, 214, 213 respectively arranged in the first layer of silicon 210.
    The shape of the first and second extra thickness is also chosen to allow, with the second and fourth waveguide sections 212, 214 respectively, and respectively the first and second ends of the gain structure 310, an adiabatic transition between the hybrid laser waveguide 313 and respectively the first and fifth waveguide sections 211, 215. Thus, as illustrated diagrammatically in FIG. 1A, the first and the second allowance 412, 414 have in a guide direction the waveguide 200 a tapered shape. Each of the first and second extra thickness 412,414 have, in a direction going from the interior of the gain structure 310 towards the exterior of the gain structure 310:
    - sure a first part of her length a section transverse growing, - sure a second part of her length, a section transverse constant, - sure a third part of her length, a section transverse
    decreasing.
    Of course, such a shape of the first and second overthickness 412, 414 is given by way of example. Other forms, as is exemplified in the remainder of this document, are perfectly conceivable without departing from the scope of the invention as long as said forms, combined with the forms of the second and fourth guide section d wave212, 214 and the shapes of the first and second ends of the active structure 310, allow the formation of a first and a second optical transition zone 312, 314 between the hybrid laser waveguide 313 and respectively the first and the fifth waveguide section 211, 215.
    The intermediate layer 420 is in contact by its second face with the first silicon layer 210. The first silicon layer 210 has a first face 210A by which it is in contact with the intermediate layer 420 and a second face 210B opposite its first face 210A.
    The first layer of silicon 210 is a layer of crystalline silicon originating from a substrate of the silicon layer 210 type on a dielectric layer 110. This type of substrate is better known under the English name of "silicon on insulator" and the English acronym SOI partner which means 'silicon on insulator'. In the particular application of the invention, the silicon layer 210 is a silicon layer originating from a silicon substrate comprising a layer of silicon on silicon dioxide SiO2, in other words an SOI substrate. One such advantage of such a silicon layer coming from a substrate of the SOI substrate type is that it has good crystalline quality and a controlled thickness, making it possible to provide a waveguide 200 having little optical loss. The layer of silicon dioxide, which corresponds to the first dielectric layer 110, is known under the English name "Buried oxide" and the acronym BOX for buried oxide. Such a silicon layer from a substrate of the SOI substrate type has the advantage of having good crystal quality and a controlled thickness, making it possible to provide a waveguide 200 having little optical loss, and also allowing the supply of a first dielectric layer of thickness and flatness controlled by means of the BOX layer.
    The first layer of silicon 210 has a thickness suitable for forming the waveguide 200 and the optical components that the waveguide 200 accommodates. Thus, in the particular application of the invention, the first layer of silicon 210 has a thickness of 300 nm. In this way, the optical components that the waveguide 200 accommodates have an optimal operating configuration.
    The first structured silicon layer 210 has a structure such that the first silicon layer 210 comprises the waveguide 200 and the first to fifth waveguide sections 211, 212, 213, 214, 215.
    Of course, as illustrated following this document, in particular in connection with FIGS. 6 to 9, the waveguide 200 can also accommodate other optical components, such as an optical modulator and a coupling network. surface, not illustrated in Figures IA at 1H.
    In the practical application of the invention, as illustrated in FIG. 1C representing a sectional view of the waveguide 200 along an axis AA, the waveguide 200 comprises, over a first part of the thickness of the first layer of silicon 210 comprising the second face 210B of the first layer of silicon 210, a base and, over a second part of the thickness, comprising the first face 210A of the layer of silicon 210, a portion, called an edge, having a reduced lateral section with respect to the base.
    Of course, such a form of the waveguide 200 is purely illustrative of the practical application of the invention and other forms are possible without departing from the scope of the invention. Thus and for example, the waveguide 200 may also have a constant lateral section or also have a base comprising the first face 210A without departing from the scope of the invention.
    The waveguide 200 is optically connected to the first waveguide section 211. In this first embodiment of the invention, the first and fifth waveguide sections 211, 215 have a configuration similar to that of the waveguide 200. Thus, according to the practical application of the invention, the first and the fifth section have a sectional view identical to that of the waveguide 200 and as illustrated in the section along the axis AA shown in Figure IC.
    The first to fifth waveguide sections 211, 212, 213, 214, 215 follow one another, the first waveguide section 211 is therefore optically connected to the second waveguide section 212 being itself connected optically to the third waveguide section 213, and so on. In this way, the first to fifth waveguide sections 211, 212, 213, 214, 215 are optically connected to the waveguide 200 by the first waveguide section 211.
    Thus, as illustrated diagrammatically in FIG. 1A, the second and the fourth portion 212, 214 have, in a similar manner to the first and second overthickness 412, 414, each in a direction going from the interior of the gain structure 310 towards the outside of the gain structure 310:
    - over a first part of its length, an increasing cross section,
    - over a second part of its length, a constant cross section,
    - over a last part of its length, a decreasing cross section.
    According to one possibility of the particular application of the invention, shown in the sectional view along the axis BB shown in Figure 1D, each of the second and the fourth waveguide section 212, 214, of the same so that the waveguide 200 and that the first and fifth waveguide sections 211, 215, can comprise a first and a second part of the thickness of the waveguide 200 having different transverse widths. Thus, the second part comprising the first face 210A of the first layer of silicon 210 has a smaller transverse width than the first part which comprises the second face 210B of the first layer of silicon 210. According to this possibility, the first part forms a base which may have a constant lateral section, only the second part, called the edge, therefore has a tapered shape as illustrated in FIG. IA. In other words, the edge of the second and fourth waveguide sections 212, 214 has its two trapezoid-shaped ends, the bases of said trapezium being transverse to the direction of propagation of light, the smallest base being the outermost base of said waveguide section 212, 214. As illustrated in FIG. 1D, the transverse width of the edge of the second and fourth waveguide sections 212, 214 has a transverse width greater than that of the additional thickness 412, 414 which partially covers it.
    Of course, as described following this document, other configurations of the first and second portions 211, 212 of the waveguide 200 are also possible without departing from the scope of the invention.
    The first silicon layer 210 comprises, accommodated in the third waveguide section 213, the optical feedback structure 220. In this first embodiment, the feedback structure 220 is a Bragg grating structure distributed 223 under the central part of the gain structure 310. More precisely, as illustrated in the top view of FIG. IA, the structure of our optical reaction 220 is a distributed Bragg grating 223 with "lateral corrugations", that is to say say that the variation in optical index of the Bragg grating is provided by a variation in the transverse width of the waveguide.
    With such a feedback structure 220, the laser is a laser of the distributed feedback laser type also known under the English name “Distributed FeedBack laser” and the corresponding acronym DFB laser.
    In the practical application of the invention and as illustrated in the sectional views along the axes CC and DD shown in FIGS. 1D and IE, the variation in transverse width for the distributed Bragg grating 223 is carried out on a first part of the thickness of the first silicon layer 210 which extends from the first face 210A of the first silicon layer 210. Thus, the feedback structure 220 comprises, in the same way as the first, second, fourth and fifth waveguide sections, a base on a first part of the thickness of the first layer of silicon 210 extending from the second face 210B of the latter, and an edge on a second part of the thickness of the silicon layer 210 extending from the first face 210A. The base has a constant transverse width, this first part of the thickness typically having a thickness of 150 nm. The edge alternately has a relatively large transverse width, which is to say “wide”, and a relatively small transverse width, which is said to be “narrow”, to form the distributed Bragg grating 223, the second part of the thickness having typically a thickness of 150 nm. In the ridge, the alternating step between the large transverse width and the small transverse width, according to the principle of a Bragg grating, is substantially of λ / 2n e ff, λ being the emission wavelength of the laser 300 and n e ff the average effective index of the mode guided by the hybrid waveguide 313. With such a configuration of the distributed Bragg grating, the distributed Bragg grating 223 is a Bragg grating with “lateral corrugations” partially etched in the thickness of the first layer of silicon 210.
    Of course, as shown in the following embodiments of the invention, the feedback structure 220 can be provided by another type of reflector without departing from the scope of the invention. In particular, the distributed reflector 223 can be supplied by a distributed Bragg grating with “lateral corrugations” totally etched in the thickness of the first layer of silicon 210.
    According to an advantageous possibility of the invention not illustrated in Figures IA to 1F and which applies in the case where the optical feedback structure 220 is provided by a distributed reflector, the distributed Bragg grating may include a phase defect quarter-wave type to optimize the selectivity of the oscillating cavity.
    As a variant of this possibility and in order to optimize the selectivity of the oscillating cavity, the first or the fifth waveguide section 211, 215 can accommodate a substantially total reflector, the total reflector being able to be selected from the Sagnac type reflectors , distributed Bragg gratings, facet type mirrors with high reflectivity treatment. For the same purpose and as a variant, it is also conceivable that one of the second waveguide section 212, the fourth waveguide section 214, the first overthickness 412, the second overthickness414, the second set waveguide section 212 and first additional thickness 412, and the fourth waveguide section 214 and second additional thickness 414 accommodates a substantially total reflector, the total reflector being able to be selected from the type of distributed Bragg grating reflectors, facet type mirrors with high reflectivity treatment
    The first silicon layer 210, for the parts of the first silicon layer 210 hollowed out during a previous operation, comprises a dielectric material, for example that of the intermediate layer 420.
    The first layer of silicon 210 has its second face 210B in contact with the first dielectric layer 110. The first dielectric layer 110 has a first face by which it is in contact with the first layer of silicon 210, and a second face opposite to the first side.
    The first dielectric layer 110 is a dielectric layer originating from a substrate of the silicon on insulator or SOI type, the latter being provided by the insulator on which the first layer of silicon 210 is disposed. According to the practical application of the invention and as already indicated in connection with the first silicon layer 210, the first dielectric layer 110 is a layer of silicon dioxide whose thickness is, for example, 30 or 50 nm.
    According to an optional possibility of the practical application of the invention, the first dielectric layer may be an insulating layer of a substrate of the silicon on insulator type whose thickness has been thinned.
    The first dielectric layer 110 is in contact with the gain structure 310 by its second face.
    As illustrated in FIG. 1, the gain structure 310 comprises:
    a first semiconductor zone 341 of a first type of conductivity formed in a first semiconductor layer 340, the gain medium 321 formed in a second semiconductor layer 320, a third semiconductor zone 331 of a second type of conductivity opposite to the first type of conductivity and formed in a third semiconductor layer 330.
    According to a usual configuration of the invention, the first, second and third semiconductor layer 340, 320, 330, and therefore the first and third semiconductor zones 341, 331 and the gain medium 321, are all three made of direct gap semiconductor materials such as III-V semiconductors. Thus, the first, and the third semiconductor layer 340, 330 are preferably produced in III-V semiconductors, such as indium phosphide InP or gallium arsenide GaAs, while the second semi layer -conductive 320 is preferably formed by a stack of binary, ternary quaternary compounds of III-V semiconductor materials.
    The first and second type of conductivity are chosen from the type of conductivity in which the majority carriers are electrons, that is to say that provided by so-called N doping, and the type of conductivity in which the majority carriers are holes, that is to say that provided by a doping called P.
    Figures IG and 1H thus illustrate, by a top view and a side sectional view along the axis FF, more precisely the arrangement of the first and third semiconductor zones 341, 331 and of the gain medium 321 in order to forming the gain structure 310. The first semiconductor zone 341 has a first face in contact with the first dielectric layer 110 and a second face opposite to the first face by which it is in contact with the gain medium 321. The medium gain 321 has a first face by which it is in contact with the first semiconductor zone 341 and a second face opposite to the first face by which it is in contact with the third semiconductor zone 331.
    The first semiconductor zone 341 has a width greater than that of the gain medium 321 and of the third semiconductor zone 331 in order to authorize a contact by means of the second electrical contact 532 which is, as shown in the figures IG and 1H, split. Thus the first semiconductor zone 341 has in contact on its second face, on either side of the gain medium 321 and of the third semiconductor zone 331, a first and a second metallic contact extending longitudinally, this first and second contact are each extended by an interconnection crossing the encapsulation layer 510 and a contact pad flush with the encapsulation layer 510. This first and second metallic contact, these interconnections and the contact pads form the second electrical contact 532.
    The gain medium 321 and the third semiconductor 331 have an identical width. The first semiconductor zone has its second face in contact with the first electrical contact 531 in the form, for example, of a longitudinal contact pad flush with the encapsulation layer 510. The longitudinal contact pad thus forms the first electrical contact 531.
    The gain structure 310 is arranged, as illustrated in FIG. 1B, in contact with the first face of the first dielectric layer 110 so that the gain structure 310 has a central portion facing the space 413. With a such configuration:
    the central portion of the gain structure 310 forms with the space 413 and the third waveguide section 213 a hybrid laser waveguide, the second waveguide section 212, the first allowance 412 and the first end of the gain structure 310 form a first optical transition zone 312 of the optical mode between the optical hybrid waveguide 313 and the first waveguide section 211, the fourth waveguide section 214, the second extra thickness 414 and the second end of the gain structure 312 form a second optical transition zone 314 of the optical mode between the optical hybrid waveguide 313 and the fifth waveguide section 215.
    Thus, the gain structure 310 is, with the exception of these first and second ends, facing the third waveguide section 213 and the space 413. With such an arrangement, the gain medium is coupled optically with the optical feedback structure 220 making it possible to form an oscillating cavity comprising the gain medium 321.
    As illustrated in FIGS. 1B and 1H, the gain structure 310 is buried in the encapsulation layer 510 with the contact pads of the first and second electrical contacts 531, 532 which are flush.
    Thus the gain structure 310, the first to fifth sections 211, 212, 213, 214, 215, with the optical feedback structure 220 which they accommodate, the space 413, and the first and second extra thicknesses 411, 412 together form the laser 300 .
    FIGS. 2A to 2G illustrate the main steps in manufacturing a method for manufacturing a photonic device 1 according to the invention. Such a manufacturing process, in the same way as all of the processes described in this document, is particularly suitable for implementing its steps in parallel to allow the formation of a plurality of devices. With such a parallel implementation, such a method of manufacturing photonic devices is said to be collective.
    Such a method comprises the following steps:
    supply of the substrate 100 associated with the first layer of silicon 210 on a first dielectric layer 110, as illustrated in FIG. 2A, structuring of the first layer of silicon 210 to form the waveguide 200 and the first to fifth guide sections wave 211, 212, 213, 24, 215 distinct from wave guide 200, the first to fifth wave guide sections 211, 212, 213, 214, 215 succeeding each other and being optically connected to the wave guide wave 200 by at least one of the first and fifth waveguide sections 211, 215, the third waveguide section accommodating the distributed Bragg grating 223 forming the optical feedback structure 220 and obtained by structuring of lateral corrugations of the waveguide section 213, as illustrated in FIG. 2B, formation of the first and of a second extra thickness 412, 414 of silicon separated from each other by a space 413, the first and second su thickness 412, 414 and the space being respectively opposite the second, fourth and third waveguide sections 212, 214, 213, burial of at least the first and second excess thickness 412, 414 of silicon by at at least one dielectric material and planarization of said dielectric material in order to form the intermediate layer 420, a substrate 100 / first dielectric layer 110 / first silicon layer 210 / intermediate layer 420 being thus formed, as illustrated in FIG. 2C, provision of a support 120 comprising a second dielectric layer 130, assembly of the substrate 100 / first dielectric layer 110 / first silicon layer 210 / intermediate layer 420 on the support 120 in contact with the second dielectric layer 130, the assembly being carried out by bonding the intermediate layer to the dielectric layer 130, as illustrated in FIG. 2D, removal of the substrate 120, as illustrated in FIG. 2E, formation of the first, second and third semiconductor layers 340, 320, 340, as illustrated in FIG. 2F, partial etching of the first, second and third semiconductor layers 340, 320, 340 so as to form the structure gain 310 being in contact with the first dielectric layer 110, and comprising the second semiconductor layer 320 as gain medium 321 and being formed by having a central portion opposite the space 413 and a first and a second end in view of part of the first and second allowance 411, 412, thus, the central portion of the gain structure 310 forms with the space 413 and the third waveguide section 213 a hybrid laser waveguide , the second and fourth waveguide sections 212, 214, the first and second extra thicknesses 412, 414 of silicon and the first and second ends of the active structure 31 0 forming a first and a second optical transition zone 312, 314 optical of the optical mode between the laser hybrid waveguide 313 and respectively the first and the fifth waveguide section 211, 215, the photonic device 1 thus being formed, as illustrated in Figure 2G.
    In such a manufacturing process, the step of forming the first and second extra thickness 412,414 can be implemented in different ways.
    Thus, according to a first possibility, the first and second extra thickness 412, 414 can be formed by selective deposition of silicon. A step of forming the first and second overthickness 412, 414 according to this possibility comprises the following sub-step:
    selective deposition of silicon to form the first and second extra thickness 412, 414.
    In order to provide a first and a second extra thickness 412, 414 formed of crystalline silicon, this sub-step of deposition of silicon can be an epitaxial deposition step, such as a chemical vapor deposition or a deposition in molecular beam epitaxy .
    It will be noted that the selective deposition of silicon to form the first and second extra thickness 412, 414 generally requires a preliminary substep of forming a mask protecting the parts of the first layer of silicon 210 not to be covered, this mask being preferably made from the dielectric material of the intermediate layer 420 and a step of depositing silicon on the parts of the first unprotected layer of silicon 210.
    Thus, according to this possibility and in the case where the mask is produced in the dielectric material of the intermediate layer, the step of forming the first and the second extra thickness 412, 414 and the step of burial are concomitant is comprises , in addition to the selective silicon deposition sub-step, the following sub-steps:
    - deposition of a first dielectric material sublayer,
    planarization and structuring of the first sub-layer of dielectric material to form the mask, this by freeing up the zones of the first silicon layer on which the first and second extra thickness are formed 412, 414,
    after the selective deposition step of silicon, planarization of the first sublayer of dielectric material and of the deposited silicon, this making it possible to ensure an identical controlled height for the first sublayer and the first and second extra thicknesses 412, 414 ,
    depositing a second sub-layer of dielectric material to bury the first and second additional thickness 412, 414 and thus form the intermediate layer 420.
    According to a second possibility, the first and second additional thickness 412,414 can be formed by the deposition of a second layer of silicon 410 (illustrated in connection with FIGS. 5A to 5H in connection with the third embodiment of the invention) and the removal, for example by etching, of the parts of said layer which are not intended to form the first and second extra thickness 412,414. The step of forming the first and second extra thickness 412, 414 of silicon according to this second possibility thus comprises the following substeps:
    depositing the second layer of silicon 410 on the first layer of silicon 210, localized etching of the second layer of silicon 410 to form the first and second extra thickness 412, 414 of silicon.
    Of course, here too, the deposition of the second silicon layer 410 can be an epitaxial deposition.
    According to a third possibility, the first and second additional thickness 412, 414 can be formed by the transfer of a second layer of silicon 410 and the removal, generally by etching, of the parts of said layer which are not intended to form the first and the second allowance 412,414. The step of forming the first and second extra thickness 412, 414 of silicon according to this third possibility thus comprises the following substeps:
    transfer, for example by molecular bonding, of the second layer of silicon 410 to the first layer of silicon 210,
    - localized etching of the second layer of silicon 410 to form the first and second extra thickness 412, 414 of silicon.
    It will be noted that according to this third possibility, the transfer of the second layer of silicon 410 is generally done by means of a second substrate on which said second layer of silicon 410 is positioned and that the step of transfer of the second layer of silicon 410 generally consists of an assembly by direct bonding of the second substrate / second silicon layer 410 assembly on the intermediate layer 420 and in the removal of the second substrate. It will be noted that according to this third possibility, the second substrate is generally an SOI substrate, the layer of second layer of silicon 410 carried over then being the layer of silicon on oxide of said substrate and the removal of the substrate consists in removing the substrate and its layer d support oxide of the second silicon layer 410.
    In the context of such a manufacturing process and according to a possibility not illustrated, it is also conceivable to provide a step of thinning the first dielectric layer 110. Such a step of thinning the first dielectric layer 110 can be either a chemical etching step, a dry etching step, or a chemical mechanical polishing step, or a combination of these steps, this in order to maintain optimal control and minimized dispersion of the thickness of the first dielectric layer 110.
    Within the framework of such a manufacturing process and according to a possibility which is not illustrated, it is also conceivable to provide a step of total removal of the first dielectric layer 110, by dry etching and a step of forming a first alternative dielectric layer. 110, followed by a planarization step of this first alternative dielectric layer 110.
    FIGS. 3A and 3B respectively illustrate an example of dimensioning of an optical transition zone 312 according to the practical application of this first embodiment and an example of alternative form of such an optical transition zone 312 allowing an adiabatic transition between the laser hybrid waveguide 313 and the first optical waveguide section 211.
    FIG. 3A thus illustrates the detailed form of an optical transition zone 312 according to the practical application of the first embodiment of the invention.
    In this example, the waveguide 200 and the first waveguide section 211 have a base, the side section of which has a width of 10 μm while the edge has a side section of a width of 400 nm.
    The second waveguide section 212 has a base with the same dimensioning as that of the waveguide 200 and that of the first section of the waveguide 211, that is to say which has a lateral section whose the width is 10 pm.
    The second waveguide section 212 comprises at its edge and in a direction going from the first waveguide section 211 towards the third waveguide section 213:
    a first tapered portion 212A, and / or trapezoidal, in which the lateral section of the edge has an increasing width from a value identical to that of the edge of the first waveguide section 211, c that is to say 400 nm, to reach a value of 1 μm,
    a second tapered and / or trapezoidal portion 212B in which the lateral section of the edge has an increasing width from a value of 1 μm to reach a value of 3 μm,
    a third constant portion 212C in which the width of the lateral section of the edge is kept constant at a value of 3 μm,
    - a tapered fourth portion 212D, and / or trapezoidal in which the lateral section of the edge has a decreasing width from a value identical to that of the third constant portion, that is to say a width of 3 pm, to reach the width value of the lateral section of the third waveguide section, ie 0.8 pm.
    According to the same design example, the first allowance 412 faces the second waveguide section 212 only at the second, third and fourth portion 212B, 212C, 212D of the second waveguide section 212 The first additional thickness thus comprises, in a direction going from the first waveguide section 211 towards the third waveguide section 213:
    - A first tapered, and / or trapezoidal portion, facing the second portion 212B of the second waveguide section 212, the first portion of the first overthickness having a lateral section which increases from a width of 120 nm to reach a width of 2.6 pm,
    a second constant portion opposite the third constant portion of the second waveguide section 212, the second constant portion having a constant width of 2.6 μm,
    - a third tapered, and / or trapezoidal portion, facing the fourth portion 212D of the second waveguide section 212, the third portion of the first allowance having a lateral section which decreases from a width of 2 , 6 pm to reach a width of 20 nm.
    According to this same practical application of the first embodiment of the invention, the gain structure has the following form:
    the first end of the first semiconductor zone 341 is located opposite the third constant portion 212C of the second waveguide section 212, the first semiconductor zone 341 having a lateral section of constant width equal to 70 μm, this width being identical to the lateral section of the first semiconductor zone 341 in the hybrid waveguide 313,
    the first ends of the gain medium 321 and of the third semiconductor zone 331 are located opposite the third portion 212C of the second waveguide section 212 near the fourth portion 212D, the gain medium 321 and the third semiconductor zone 331 having a lateral section of constant width equal to 5 μm, this width being identical to the width of their lateral section in the hybrid waveguide 313.
    FIG. 3B illustrates a close-up view of a first optical transition zone 312 having an alternative configuration to that described above. In this alternative configuration, the first additional thickness 412 has an isosceles trapezoidal shape with its bases which extend parallel to the direction of propagation of the light, while the second waveguide section 212 has a tapered shape similar to that described in the framework of the first embodiment.
    Thus, as illustrated in FIG. 3B, the second section 212 of the waveguide comprises, at its edge:
    - over a first part of its length, an increasing cross section,
    - over a second part of its length, a constant cross section, which represents a majority part of the length of the second section of the waveguide,
    - over a last part of its length, a decreasing cross section.
    The first extra thickness 412 comprises, as illustrated in FIG. 3B, an isosceles trapezoidal shape with a first base, called long, having a length greater than that of the second part of the second section 212, and a base, said short, of a length less than that of the second part of the second section 212. The first additional thickness 412 has a width greater than that of the base of the second section and less than that of the gain structure 310, and in particular of the third zone semiconductor 331 of the gain structure 310.
    Of course, in a manner identical to the first additional thickness 412 described in the context of the first embodiment, the thickness of the first additional thickness412 is chosen to allow, with the second waveguide section 212, an adiabatic transition between the guide d hybrid laser wave 313 and the first waveguide section 211.
    The configuration of the gain structure 310 is substantially identical to that described in connection with FIG. 3A.
    These two configurations of the first and second extra thicknesses 412, 414 and of the first and second portions 211, 212 described in the context of this first embodiment are given as configuration examples allowing optimized coupling between the hybrid waveguide 313 and the first waveguide section 211 and are in no way limiting.
    FIGS. 4A to 4F illustrate a photonic device 1 according to a second embodiment in which the optical feedback structure 220 is provided by a distributed Bragg grating of the type 223 with "vertical corrugations" partially etched in the thickness of the first silicon layer 210 at the third waveguide section 213. A photonic device 1 according to this second embodiment differs from the photonic device 1 according to the first embodiment only by the optical feedback structure 220.
    Thus, in this second embodiment, the optical feedback structure 220 is provided by a distributed Bragg grating of the type with “vertical corrugations” partially etched in the first layer of silicon 210, that is to say that the variation periodic optical index of the Bragg grating is provided by a variation of the periodic thickness of the third waveguide section 213.
    In the practical application of the invention, as illustrated by the sectional views along axes II and JJ shown in FIGS. 4E and 4F, the thickness variation in the third waveguide section 213 is carried out on a second part of the thickness of the first layer of silicon 210 which extends from the first face 210A of the first layer of silicon 210 and which typically has a thickness of 150 nm. This second part corresponds to the edge of the third waveguide section 213. The feedback structure 220 has a thickness thus varying over the entire height of the edge between a small thickness, substantially zero, and a large thickness. , corresponding to the height of said portion of first silicon layer 210 The alternation period between the small thickness and the large thickness, according to the principle of a Bragg grating, is substantially equal to λ / 2n e ff, λ being the emission wavelength of the laser 300. The first part of the first silicon layer 210 in the third waveguide section 213, according to the practical application of the invention, has a constant thickness and forms the base of the third waveguide section 213.
    The method of manufacturing a photonic device 1 according to this second embodiment differs from the method of manufacturing a photonic device 1 according to the first embodiment in that during the structuring step of the first silicon layer 210, the optical feedback structure 220 formed is a Bragg grating with "vertical corrugations" partially etched in the thickness of the first layer of silicon 210.
    FIGS. 5A to 5G illustrate, in a longitudinal section view, the main stages of manufacturing a photonic device 1 according to a third embodiment in which the optical feedback structure 220 is a Bragg grating with "vertical corrugations" oriented towards the gain structure 310 and partially etched in the thickness of the first layer of silicon 210 comprising the first face 210A of the first layer of silicon 210 .. A photonic device 1 according to this third embodiment differs from a photonic device 1 according to the second embodiment, in addition to the orientation of the optical feedback structure 220, in that a third dielectric layer 401 is provided between the first silicon layer 210 and the first and second thickeners 412, 414, in that the structures of the first layer of silicon 210 are not filled with a dielectric material risk, and in that the structures of the first layer of silicon 210 are also transferred to the first dielectric layer 110.
    A manufacturing process according to this third embodiment comprises the following steps:
    supply of the substrate 100 associated with the first layer of silicon 210 on the first dielectric layer 110, as illustrated in FIG. 5A, formation of a third dielectric layer 401 on the first face of the first layer of silicon 210, formation of a second layer of silicon 410 in contact with the third dielectric layer 401, as illustrated in FIG. 5B, selective etching of the second layer of silicon 410 so as to form the first and second extra thickness 412,414 of silicon covering opposite zones respectively of the first layer of silicon 210 intended to form the second and the fourth waveguide section 212, 214, the first and the second thicknesses being separated by the space 413 facing an area of the first layer of silicon 210 intended to form the third waveguide section 213, as illustrated in FIG. 5C burial of the first and of the second th extra thickness 412, 414 of silicon and filling of space 413 with a dielectric material and planarization of said dielectric material in order to form a plane intermediate layer 420, a set of substrate 100 / first dielectric layer / first layer of silicon 210 / intermediate layer 420 thus being formed, as illustrated in FIG. 5D, supply of a support 120 comprising a second dielectric layer 130, assembly of the substrate 100 / first dielectric layer 110 / first silicon layer 210 / intermediate layer 420 on the support 120 , the assembly being carried out by bonding the intermediate layer to the second dielectric layer 130 of the support 120, removal of the substrate 120, as illustrated in FIG. 5E, deposition of a hard mask 710, for example made of silicon nitride SiN, on the first dielectric layer 110 as illustrated in FIG. 5F, structuring of the first layer of silicon 210 and of the first dielectric layer 110 through the hard mask 710 so as to form the waveguide 200 and the first to fifth waveguide sections 211, 212, 213, 214, 215 distinct from the waveguide distinct from the guide wave 210, the first to the fifth wave guide section 211, 212, 213, 214, 215 succeeding each other and being optically connected to the wave guide 200 by at least one of the first and the fifth section waveguide 211, 215, the third waveguide section 213 accommodating the optical feedback structure 220, the second, fourth and third waveguide section 212, 214, 213 being opposite the first and second extra thickness 414, 414 and space 413 respectively, removal of the hard mask 710 so as to release the first layer of dielectric 110, as illustrated in FIG. 5G, formation of the gain structure 310 in contact with the first dielectric layer 110, the str gain gain 310 comprising at least the gain medium 321 capable of emitting light, the gain structure 310 having a central portion facing the space 413 and a first and a second end facing the first and second extra thickness 412, 414, thus, the central portion of the gain structure 310 forms with the space 413 and the third waveguide section 213 a hybrid laser waveguide 313, the second and fourth guide sections wave 212, 214, the first and second extra thicknesses 412, 414 of silicon and the first and second ends of the gain structure 310 forming a first and a second optical transition zone 312, 314 of the optical mode between the hybrid waveguide laser 313 and respectively the first and fifth waveguide sections 211, 215, as illustrated in Figure 5H.
    Note that if in this method there is provided a step of forming a third dielectric layer 401, this step is optional. Thus, in the event that such a step is not implemented, the second layer of silicon 410 is then formed in contact with the first face 210A of the first layer of silicon 210 during the step of forming the second layer. of silicon 410. Such an optional step of forming a third dielectric layer 401 is compatible with the main embodiments of the invention.
    FIG. 6 illustrates a photonic device 1 according to a fourth embodiment in operation and in which there is provided a hybrid optical modulator 230 of the capacitive type. A photonic device 1 according to this fourth embodiment differs from a photonic device 1 according to the third embodiment in that the optical feedback structure 220 comprises, in addition to the Bragg grating with "vertical corrugations" partially etched in the first layer of silicon accommodated in the third waveguide section 213, a substantially total reflector 250 in the form of a Bragg grating accommodated in the first waveguide section 211, and in that the guide d wave 210 accommodates an optical modulator 230 of the capacitive type and a coupling network 240 partially etched in the first layer of silicon 210.
    Thus, it can be seen in FIG. 6, that the first silicon layer also comprises a doped silicon zone 232, in relation to a fourth semiconductor zone 231, and a coupling network 240 for extracting the radiation at the output of the device photonics 1. The coupling network is a network with “vertical and lateral corrugations”.
    The photonic device 1 further comprises the fourth semiconductor zone 231 which, formed of the same material as the first semiconductor zone 341, is opposite the doped zone 232. The fourth semiconductor zone 231 is in contact with the second face of the first dielectric layer 110. In this way, the fourth semiconductor zone 231, the doped silicon zone 232 and the part of the dielectric layer 110 which separates them together form the hybrid optical modulator 230 of the capacitive type.
    The first waveguide section 211 also accommodates a Bragg grating forming a substantially total reflector 250 this in order to optimize the selectivity of the oscillating cavity formed by the optical feedback structure 220.
    The method of manufacturing a photonic device 1 according to this fourth embodiment differs from a manufacturing method according to the second embodiment in that:
    during the structuring of the first silicon layer 210, there is also formed the coupling network 240 accommodated in the waveguide 200 and a Bragg grating, forming the substantially total reflector 250, accommodated in the first guide section d wave 211, there is provided a step of localized doping of the first silicon layer 210 in order to form the doped silicon zone 232 of a conductivity type opposite to the conductivity type of the fourth semiconductor zone 231 and during the formation of the gain structure 310, the fourth semiconductor zone 231 is also formed opposite the doped zone 232 in order to form the capacitive modulator 230.
    FIGS. 7A and 7B schematically illustrate two sectional views along the axes LL and MIVI of a device according to this fourth embodiment in which an example of arrangement of a first to a fourth electrical contact has been added 531, 532,533 , 534 on the substrate side 120 in the context of a photonic device according to this fourth embodiment. Note that these Figures 7A and 7B also illustrate an encapsulation layer 510 of the gain structure 310 and the fourth semiconductor area 231 is made of a dielectric material.
    FIG. 7A illustrates more precisely the first and second electrical contacts 531, 532 in connection with the gain structure 310. These first and second electrical contacts 531, 532 are distributed on either side of the gain structure 310 in a direction transverse to the optical feedback structure 220 for respectively connecting the first and the third semiconductor zone 331, 341. More precisely, the first and the second electrical contact 531, 532 each comprise a respective metal contact in contact respectively with the surface of the first and third semiconductor zones 331, 341 and adapted to form with this latter semiconductor zone 331, 341 an ohmic contact. The first and second electrical contacts 531, 532 each further comprise a respective metallic via passing through the first dielectric layer 110, the intermediate layer 420 and the support 120 comprising the layer 130. Each of the metallic via of the first and second electrical contacts 531, 532 opens onto the surface of the support 120 in order to allow contact with a control circuit, not illustrated, of the laser 300.
    FIG. 7B illustrates the third and fourth electrical contacts 533, 534 in connection with the optical modulator 230. The third electrical contact 533 makes it possible to connect the fourth semiconductor zone 231 of the optical modulator 230 and has a configuration similar to the first and to the second electrical contact 531, 532. Thus the third electrical contact 533 comprises a metal contact in contact with the surface of the fourth semiconductor zone 231 and adapted to form an ohmic contact therewith. The third electrical contact 533 further comprises a respective metallic via passing through the first dielectric layer 110, the intermediate layer 420 and the support 120. The fourth electrical contact 534 comprises a metallic via in contact with the surface of the doped zone 232 by forming with the latter an ohmic contact. The respective via of the third and fourth electrical contact 533, 534 each open onto the surface of the support 120 in order to allow contact to be made with a control circuit, not illustrated, of the optical modulator 230.
    Of course, according to the same principle and in the case where the waveguide 200 accommodates other active optical components, such as for example a multiplexer and a demultiplexer, the photonic device 1 can comprise complementary metallic via passing through the first layer dielectric 110, the intermediate layer 420 and the support 120 and opening onto the surface of the support 120 in order to allow contact with the control circuit of these same active optical components. This control circuit, in the same way as the control circuits for the laser 300 and the optical modulator 230 can be an exclusive control circuit for said active optical components or a common control circuit with the optical modulator 230 and / or the laser 300 Thus the laser control circuit 300 and the control circuit of the optical modulator 230 can therefore both be supplied by a single control circuit of the photonic device 1.
    With such a configuration from the first to the fourth electrical contacts 531, 532, 533, 534, it is possible to control the various components of the photonic device 1 according to the fourth embodiment, this by connecting it to a control circuit on its face on the support side. 120.
    FIGS. 8A and 8B schematically illustrate a second example of arrangement of a first to a fourth electrical contact 531, 532, 533, 534 on the encapsulation layer side 510 in the context of a photonic device 1 according to the fourth embodiment . In the same way as the possibility illustrated in FIGS. 7A and 7B, the photonic device 1 as illustrated in FIGS. 8A and 8B thus also comprises an encapsulation layer 510 making it possible to encapsulate the gain structure 310 and the fourth semiconductor zone 231.
    It can be seen in FIG. 8A that the first electrical contact 531 consists of a lateral metal contact in contact with the surface of the third semiconductor zone 341 and adapted to form an ohmic contact therewith. The lateral metal contact of the first electrical contact 531 opens into a second face of the encapsulation layer 510 which is opposite to the first dielectric layer 110. The second electrical contact 532 comprises a metal contact for contacting the first semiconductor zone 331 and adapted to form ohmic contact with the latter. The second electrical contact 532 furthermore comprises a metallic via in contact with the metallic contact and passing through the encapsulation layer 510 leading to the second face of the encapsulation layer 510.
    FIG. 8B illustrates the third and fourth electrical contacts 533, 534 in connection with the optical modulator 230. The third electrical contact 253 makes it possible to connect the fourth semiconductor zone 231 of the optical modulator 230 and has a configuration similar to the second electrical contact 532 Thus, the third electrical contact 533 includes a metal contact in contact with the surface of the fourth semiconductor zone 231 and adapted to form an ohmic contact therewith. The third electrical contact 533 further comprises a metallic via passing through the encapsulation layer 510. The metallic via of the third electrical contact 533 opens onto the second face of the encapsulating layer 510. The fourth electrical contact 254 comprises a metallic via in contact with the surface of the doped zone 232 by forming an ohmic contact with the latter and passing through the first dielectric layer 110 and the encapsulation layer 510 by opening into the second face of the latter. The respective metal via of the third and fourth electrical contact 532, 534, each opening on the second face of the encapsulation layer 510 allow contact to be made with a control circuit, not illustrated, of the photonic device 1.
    FIG. 9 shows a top view and a longitudinal section view along the axis NN of a photonic device 1 according to a fifth embodiment in which the optical feedback structure 220 is formed by a first and a second network of Bragg 221, 222 respectively accommodated in the first and fifth waveguide sections 211, 215. The photonic device 1 according to this fifth embodiment differs from a photonic device 1 according to the first embodiment as illustrated by FIGS. 1A to 1F in that the feedback structure is formed by the first and the second Bragg grating 221, 222 accommodated respectively in the first and the fifth waveguide section 211, 215.
    As illustrated in FIG. 9, the feedback structure is formed by a first and a second Bragg grating 221, 222 of the “vertical corrugation” type partially etched in the thickness of the first layer of silicon 210 accommodated respectively in the first and fifth waveguide sections 211, 215. The first and second Bragg gratings 221, 222 are of the same type as that of the optical feedback structure 220 of the photonic device 1 according to the fourth illustrated embodiment in FIG. 6. The first and second Bragg grids are separated from each other by a distance suitable for forming an oscillating cavity comprising the gain medium 321. In this way the laser 300 is a cavity laser delimited at its two ends by two distributed Bragg gratings, better known under the English name “distributed Bragg reflector laser” and its laser acronym DBR. In such a configuration, the second and fourth waveguide sections 212, 214 are arranged inside the oscillating cavity delimited by the first and second Bragg gratings 221, 222.
    FIGS. 10A and 10B respectively illustrate close-up views of the first and second waveguide sections 211, 212 of a photonic device 1 according to respectively a sixth and a seventh embodiment in which the first and second Bragg gratings 221 , 222 are accommodated in, for the sixth embodiment, the second and the fourth waveguide section 212, 214, and for the seventh embodiment, the first and the second allowance 412, 413.
    Thus, as shown in the top view and the longitudinal section view along the axis OO of FIG. 10A, the photonic device 1 according to the sixth embodiment differs from a photonic device according to the fifth embodiment in that that the first and second Bragg gratings 221, 222 are respectively formed in the second and fourth waveguide sections 212, 214 and in that the first and second Bragg gratings are "side corrugating Bragg gratings" »Partially etched in the thickness of the first layer of silicon 210.
    As illustrated in FIG. 10A, the first and the second Bragg grating 221, 221 are accommodated in the second and the fourth waveguide section 212, 214 in a portion of the latter which has a lateral section which, in l absence of the corrugations forming said Bragg grating is substantially constant. The first and second Bragg gratings 221, 222 are, according to the principle described in the context of the first embodiment, Bragg gratings distributed with "lateral corrugations" partially etched in the first layer of silicon 210.
    The method of manufacturing the photonic device 1 according to this sixth embodiment differs from the method of manufacturing the optical device according to the first embodiment in that during the step of structuring the first layer of silicon 210, the first layer of silicon is structured to form the first and second Bragg gratings 221, 222 accommodated in the second and fourth waveguide sections 212, 214 respectively and in that it is not formed of Bragg gratings in the third waveguide section 213.
    The optical device 1 according to the seventh embodiment, illustrated by the top view and the view in longitudinal section along the axis PP shown in FIG. 10B, differs from an optical device 1 according to the fifth embodiment in that that the first and the second Bragg grating 221, 222 are respectively formed in the first and the second allowance 412, 414 and in that the first and the second Bragg grating 221, 222 are Bragg grids with "vertical corrugation" totally engraved in the thickness of the first and second overthickness 412, 414.
    As illustrated in FIG. 10B and similarly to the photonic device 1 according to the sixth embodiment, the first and the second Bragg grating 221, 221 are accommodated in the first and the second allowance 412, 414 in a portion of the latter which has a lateral section which, in the absence of the corrugations forming said Bragg grating, is substantially constant. The first and second Bragg gratings 221, 222, according to a principle similar to that described in the context of the second embodiment, are distributed Bragg gratings with "vertical corrugations". The first and second Bragg gratings are totally etched in said first and second extra thicknesses 412, 414.
    The method for manufacturing the photonic device 1 according to this seventh embodiment differs from the method for manufacturing the optical device according to the sixth embodiment in that during the step of structuring the first silicon layer 210, there is no there is no formation of Bragg gratings and in that, during the step of forming the first and second overthickness 412, 414, the first and the second overthickness 412, 414 respectively accommodate the first and second Bragg gratings 221, 222.
    FIGS. 11A to 11C illustrate a top view and views in longitudinal and lateral section along the axes QQ and RR of a photonic device according to an eighth embodiment in which the gain structure 310 is of the “lateral junction” type . A device according to this eighth embodiment differs from a phonic device 1 according to the second embodiment in that the gain structure 310 is a gain structure of the “side junction” type and in that the guide wave 200 is produced for a part in the first silicon layer 210 and for the rest in at least a third extra thickness 402 of silicon.
    As illustrated in FIGS. 11A and 11B, the waveguide 200 is partly arranged in the first layer of silicon 210 and at least a third extra thickness 402 of silicon which extends only at the level of the first end of the gain structure 310 by the first extra thickness412 of silicon. It will be noted in particular that the third extra thickness 402 of silicon covers the first waveguide sectios 211.
    The gain structure 310 comprises, as illustrated in FIG. 11C successively and in a cross section of the hybrid waveguide 313 along the axis RR:
    a first semiconductor region 341 of a first type of conductivity, a second semiconductor region, comprising a stack consisting of at least one layer of quantum well, or quantum dots, and confinement layers, the second region semiconductor forming the gain medium 321, a third semiconductor zone 331 of a second type of conductivity opposite to the first type of conductivity of the semiconductor zone 341.
    The gain structure 310 further comprises, as illustrated in FIGS. 11A to 11C, a first and a second coupling zone 351, 352 unintentionally doped arranged on either side of the first, second and third semiconductor zones 341 , 331 in the direction of light propagation, and a semiconductor layer 353, also unintentionally doped, interposed between the first dielectric layer and the rest of the gain structure 310. The first and the second coupling zone 351, 352 thus each correspond to one end of the gain structure 310 by means of which the first and second optical transition zones 312, 314 allow adiabatic transmission of the optical mode between the laser hybrid waveguide 313 and respectively the first and fifth waveguide sections 211, 215.
    The manufacturing method of a photonic device according to this sixth embodiment of the invention differs from the manufacturing method according to the second embodiment of the invention in that:
    it further comprises a step of forming at least a third extra thickness 402 of silicon covering the parts of the silicon layer 210 included or being intended to be included in the waveguide 200 and which are not intended to be covered by the central zone of the gain structure 310 and by the first and second overthickness 412, 414, and in that during the step of forming the gain structure 310, the gain structure is a "junction" structure lateral ”.
    Of course, if a configuration according to this eighth embodiment is particularly advantageous for a photonic device comprising a gain structure 310 of the “lateral junction” type, it is also perfectly conceivable to provide a photonic device comprising such a gain structure 310 with a configuration of any of the previously described embodiments. With such a configuration, a third extra thickness 402 is therefore not produced, participating in the formation of the waveguide 200. In the same way, it is perfectly conceivable that a device comprising a gain structure 310 of the " vertical junction "could also include such a third extra thickness 402.
    It will also be noted that, in a variant not illustrated in such a third allowance 402, it is also possible, without departing from the scope of the invention, for the arrangement of the waveguide 200 to be an arrangement of a first part of the thickness of the waveguide 200 in the first layer of silicon 210 and a second part of the thickness of the waveguide 200 in a fifth excess thickness made of a material of the gain structure 310, or although this arrangement is a combination of at least two arrangements among:
    an arrangement of the waveguide 200 entirely in the first layer of silicon 210,
    an arrangement of a first part of the thickness of the waveguide 200 in the first layer of silicon 210 and of a second part of the thickness of the waveguide 200 in a third extra thickness 402 of silicon,
    an arrangement of a first part of the thickness of the waveguide 200 in the first layer of silicon 210 and of a second part of the thickness of the waveguide 200 in a fifth extra thickness made of a material of the gain structure 310.
    Of course, if in all of the embodiments described above, the gain structure has a rectangular shape, other forms of the gain structure are perfectly conceivable without departing from the scope of the invention. Thus, for example, a person skilled in the art is able to understand that the ends of the gain structure can also have a tapered shape, that is to say that some or all of the layers constituting the gain structure can thinning starting from the central part and going towards the edge following a longitudinal axis of the gain structure. This shape of each of the ends of the gain structure can be, among other examples, trapezoidal.
    权利要求:
    Claims (17)
    [1" id="c-fr-0001]
    1. Photonic device (1) comprising:
    a support (120), an intermediate layer (420) in contact with the support (120) and comprising at least one dielectric material and a first and a second extra thickness of silicon (412, 414), the first and the second extra thickness (412 , 414) of silicon being separated from each other by a space (413) a first layer of silicon (210) in contact with the intermediate layer (420) opposite the support (120), the first layer silicon (210) having at least part of the thickness of a waveguide (200), and a first to a fifth waveguide section (211, 212, 213, 214, 215) distinct from the waveguide (200), the first to fifth waveguide sections (211, 212, 213, 214, 215) succeeding each other and being optically connected to the waveguide (200) by at least one of the first and fifth waveguide sections (211, 215), the second, fourth and third waveguide sections (212, 214, 213) both facing the first and second extra thickness (414, 414) and the space (413) respectively, a first layer of dielectric (110) covering the first layer of silicon (210) opposite to the layer intermediate (420), a gain structure (310) comprising at least one gain medium (321) capable of emitting light, the gain structure (310) having a central portion facing the space (413) and a first and a second end opposite the first and the second allowance (412, 414), thus, the central portion of the gain structure (310) forms with the space (413) and the third guide section wave (213) a laser hybrid waveguide (313), the second and fourth waveguide sections (212, 214), the first and second thickeners (412,414) of silicon and the first and second ends of the structure gain (310) forming first and second optical transition zones (312, 314) optically between the laser hybrid waveguide (313) and the first and fifth waveguide sections (211, 215) respectively, a feedback structure (220) to form an oscillating cavity comprising at least part of the gain medium (321) so as to form a laser (300) optically connected to the waveguide (200) by at least one of the first and the fifth waveguide sections ( 211, 215).
    [2" id="c-fr-0002]
    2. Photonic device (1) according to claim 1 wherein the third waveguide section (213) accommodates a distributed reflector (223) forming the feedback structure (220).
    [3" id="c-fr-0003]
    3. Photonic device (1) according to claim 2, in which the distributed reflector (223) is a distributed Bragg grating selected from the group comprising the distributed Bragg grids with lateral corrugations partially etched in a thickness of the first layer of silicon (210), the distributed Bragg gratings with lateral corrugations totally etched in the thickness of the first silicon layer (210), the distributed Bragg gratings with vertical corrugations partially etched in the thickness of the first silicon layer (210 ) and the distributed Bragg gratings with vertical corrugations totally etched in the thickness of the first layer of silicon (210).
    [4" id="c-fr-0004]
    4. Photonic device (1) according to claim 3, in which the distributed reflector 223 is selected from the group comprising the Bragg gratings distributed with lateral corrugations partially etched in a thickness of the first layer of silicon and the Bragg gratings distributed at vertical corrugations partially etched in the thickness of the first silicon layer, and in which the part of the thickness of the first silicon layer (210) in which the corrugations are etched is the part of the thickness of the first layer silicon (210) which is opposite the first dielectric layer (110) and the gain structure (310).
    [5" id="c-fr-0005]
    5. A photonic device (1) according to claim 1, wherein the first and the fifth waveguide section (211, 215) respectively accommodate a first and a second mirror (221, 222) so as to form an oscillating cavity comprising the gain medium (321), the first and second mirror forming the feedback structure (220).
    [6" id="c-fr-0006]
    6. A photonic device (1) according to claim 1, in which the second and the fourth waveguide section (212, 214) respectively accommodate a first and second distributed Bragg grating (221, 222) so as to form a oscillating cavity comprising the gain medium (321), the first and second distributed Bragg gratings forming the feedback structure (220).
    [7" id="c-fr-0007]
    7. Photonic device (1) according to claim 1 or 6 in which the first and second extra thickness (411,414) respectively accommodate a first and second distributed Bragg grating (221, 222) so as to form an oscillating cavity comprising the medium to gain (321), the first and second distributed Bragg grids forming the feedback structure (220).
    [8" id="c-fr-0008]
    8. Photonic device (1) according to any one of claims 1 to 7 in which the gain structure (310) is chosen from the group comprising gain structures of the “vertical junction” type and gain structures of the type with "lateral junction".
    [9" id="c-fr-0009]
    9. Photonic device (1) according to any one of claims 1 to 8, in which the arrangement of the waveguide (200) is chosen from:
    an arrangement of the waveguide (200) entirely in the first layer of silicon (210),
    an arrangement of a first part of the thickness of the waveguide (200) in the first layer of silicon (210) and of a second part of the thickness of the waveguide (200) in a third extra thickness (402) of silicon,
    an arrangement of a first part of the thickness of the waveguide (200) in the first layer of silicon (210) and of a second part of the thickness of the waveguide (200) in a fifth extra thickness made of a material of the gain structure (310)
    - a combination of at least two of the above-mentioned arrangements.
    [10" id="c-fr-0010]
    10. Photonic device (1) according to any one of claims 1 to 9, in which the first waveguide (200) accommodates at least one optical component, the optical component preferably being chosen from the group comprising optical silicon modulators with PN junction, lll-V semiconductor hybrid modulators on silicon, surface coupling networks, wafer couplers, optical filters, wavelength multiplexers and demultiplexers, and photodetectors including photodetectors germanium on silicon and lll-V semiconductor photodetectors on silicon.
    [11" id="c-fr-0011]
    11. Photonic device (1) according to any one of claims 1 to 10 in which the first and the second extra thickness (412, 414) of silicon are each made of a silicon selected from a monocrystalline silicon, an amorphous silicon, and polycrystalline silicon.
    [12" id="c-fr-0012]
    12. Method for manufacturing a photonic device (1) comprising at least one silicon waveguide (200) and a laser (300) comprising a gain medium (321) capable of emitting light, the method comprising the following steps:
    providing a substrate (100) associated with a first layer of silicon (210) on a first dielectric layer (110), structuring the first layer of silicon (210) to form at least in the first layer of silicon (210) a thickness part of a waveguide (200) and of the first to fifth waveguide sections (211, 212, 213, 214, 215) distinct from the waveguide distinct from the waveguide ( 200), the first to the fifth waveguide section (211, 212, 213, 214, 215) succeeding each other and being optically connected to the waveguide (200) by at least one of the first and the fifth waveguide section (211, 215), forming first and second extra thickness (412,414) of silicon separated from each other by a space (413), the first and second extra thickness (412, 414) and the space (413) being opposite respectively the second, fourth and third waveguide sections (212, 214, 213) or areas of the first layer of silicon (210) intended for forming them, burial of at least the first and second extra thickness (412,414) of silicon by at least one dielectric material and planarization of said dielectric material in order to form an intermediate layer (420 ), a substrate (100) / first dielectric layer (110) / first silicon layer (210) / intermediate layer (420) being thus formed, supply of a support (120), assembly of the substrate assembly (100) ) / first dielectric layer (110) / first silicon layer (210) / intermediate layer (420) on the support (120), the assembly being carried out by bonding the intermediate layer to the support (120), removal of the substrate (100), forming a gain structure (310) comprising at least the gain medium (321), the gain structure (310) being formed in contact with the first dielectric layer (110) by presenting a central portion of the struc gain structure (310) facing the space (413) and a first and a second end facing the first and second allowance (411, 412), thus, the central portion of the gain structure (310) forms with space (413) and the third waveguide section (213) a hybrid laser waveguide (313), the second and fourth waveguide sections (212, 214), the first and second silicon extra thicknesses (412, 414), and the first and second ends of the gain structure (310) forming a first and a second optical transition zone (312, 314) of an optical mode between the waveguide hybrid laser (313) and respectively the first and fifth waveguide sections (211,215), the photonic device (1) being thus formed, and in which there is further formed a feedback structure (220) to form an oscillating cavity comprising at least partly the gain medium and thus forming a cone laser (300) optically side of the waveguide (200) by at least one of the first and fifth waveguide sections (211, 215) during the at least one of the steps from the structuring step of the first layer of silicon (210) and the step of forming the first and second extra thickness (412, 414) of silicon.
    [13" id="c-fr-0013]
    13. The manufacturing method according to claim 12, wherein the step of structuring the first silicon layer (210) is prior to the step of forming the first and second extra thicknesses (412, 414) of silicon.
    [14" id="c-fr-0014]
    14. The manufacturing method according to claim 12, in which the step of structuring the first silicon layer (210) is subsequent to the step of removing the substrate (100) and in which the step of structuring the first silicon layer (210) is a step of structuring the first silicon layer (210) and the first dielectric layer (110).
    [15" id="c-fr-0015]
    15. The manufacturing method according to any one of claims 12 to 14, wherein there is further provided a step of thinning the first dielectric layer (110) between the steps of removing the substrate (100) and forming the gain structure (310).
    [16" id="c-fr-0016]
    16. Method according to any one of claims 12 to 15, in which the step of forming the first and the second extra thickness (412, 414) of silicon is selected from the following group of forming steps:
    - selective deposition of silicon in contact with the first silicon layer to form the first and the second (412, 414) extra thickness of silicon,
    - depositing a second layer of silicon (410) and localized etching of the second layer of silicon (410) to form the first and second (412, 414) extra thickness of silicon,
    - Assembling a second layer of silicon on the first layer of silicon (210) and localized etching of the second layer of silicon (410) to form the first and second (412, 414) extra thickness of silicon.
    5
    [0017]
    17. The manufacturing method according to any one of claims 12 to 16, further comprising the following step:
    forming at least a third excess thickness (402) of silicon covering parts of the first layer of silicon (210) structured or intended to be structured, the third waveguide section (213) remaining free of excess thickness 10 of silicon additional (201), and wherein the at least a third extra thickness (402) of silicon is part of the waveguide (200).
    S.61794
    2/16
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    法律状态:
    2018-01-31| PLFP| Fee payment|Year of fee payment: 2 |
    2018-07-20| PLSC| Search report ready|Effective date: 20180720 |
    2020-01-30| PLFP| Fee payment|Year of fee payment: 4 |
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1750441A|FR3061961B1|2017-01-19|2017-01-19|PHOTONIC DEVICE COMPRISING A LASER OPTICALLY CONNECTED TO A SILICON WAVEGUIDE AND METHOD FOR MANUFACTURING SUCH A PHOTONIC DEVICE|
    FR1750441|2017-01-19|FR1750441A| FR3061961B1|2017-01-19|2017-01-19|PHOTONIC DEVICE COMPRISING A LASER OPTICALLY CONNECTED TO A SILICON WAVEGUIDE AND METHOD FOR MANUFACTURING SUCH A PHOTONIC DEVICE|
    US15/873,465| US10483716B2|2017-01-19|2018-01-17|Photonic device comprising a laser optically connected to a silicon wave guide and method of fabricating such a photonic device|
    EP18152261.6A| EP3352312B1|2017-01-19|2018-01-18|Photonic device including a laser optically connected to a silicon waveguide and method for manufacturing such a photonic device|
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